电话：0755-23256217

个人介绍

杨鹏，理学博士，2020年毕业于复旦大学，获得微电子学与固体电子学专业博士学位，荣获复旦大学优秀毕业生。从事新型二维半导体材料及其异质结的生长制备及其在微纳电子器件、光电器件、忆阻器等领域的应用研究，2022年加入深圳技术大学集成电路与光电芯片学院担任助理教授。

截至2022年12月，在国内外知名期刊上发表论文20余篇，其中包含Nature Communications、Advanced Science、Nano-Micro Letters、Nano Energy、Nano Research、Nanoscale等。申请发明专利2项，已授权2项。

教育及工作经历

2022.12至今，深圳技术大学，助理教授

2021.6-2022.6，香港城市大学，访问学者

2020.12-2022.11，深圳大学，博士后

2020.9，微电子学与固体电子学博士（复旦大学）

研究领域

二维半导体材料的控制生长及其微纳电子器件、光电探测器、忆阻器等应用。

代表性文章 

[1]. Peng Yang, Jiajia Zha*, Guoyun Gao, Long Zheng, Haoxin Huang, Yunpeng Xia, Songcen Xu, Tengfei Xiong, Zhuomin Zhang, Zhengbao Yang, Ye Chen, Dong-Keun Ki, Juin J. Liou, Wugang Liao*, Chaoliang Tan*. Growth of tellurium nanobelts on hexagonal boron nitride for p-type field-effect transistors with ultrahigh hole mobility. Nano-Micro Letters 2022, 14, 109.

[2]. Peng Yang^#, Ai-Guo Yang^#, Lingxiu Chen, Jing Chen, Youwei Zhang, Haomin Wang, Laigui Hu, Rong-Jun Zhang, Ran Liu, Xin-Ping Qu*, Zhi-Jun Qiu*, Chunxiao Cong*. Influence of seeding promoters on the properties of CVD grown monolayer molybdenum disulfide. Nano Research 2019, 12, 823-827.

[3]. Peng Yang, Yabing Shan, Jing Chen, Garel Ekoya, Jinkun Han, Zhi-Jun Qiu, Junjie Sun, Fei Chen, Haomin Wang, Wenzhong Bao, Laigui Hu, Rong-Jun Zhang, Ran Liu, Chunxiao Cong*. Remarkable quality improvement of as-grown monolayer MoS₂ by sulfur vapor pretreatment of SiO₂/Si substrate. Nanoscale 2020, 12, 1958-1966.

[4]. Peng Yang^#, Haifeng Yang^#, Zhengyuan Wu, Fuyou Liao, Xiaojiao Guo, Jianan Deng, Qiang Xu, Haomin Wang, Junjie Sun, Fei Chen, Wenzhong Bao, Laigui Hu, Zhongkai Liu, Yulin Chen, Zhi-Jun Qiu, Zhilai Fang, Ran Liu*, Chunxiao Cong*. Large-area monolayer MoS₂ nanosheets on GaN substrates for light-emitting diodes and valley-spin electronic devices. ACS Applied Nano Materials 2021, 4(11) 12127–12136.

[5]. Peng Yang, Tianru Wu, Haomin Wang, Guangyuan Lu, Lianwen Deng*, Shengxiang Huang. Synthesis of multilayer hexagonal boron nitride on Cu-Ni alloy by chemical vapor deposition. Chinese Science Bulletin 2017, 62, 2279-2286.

[6]. Yudong Pang; Wugang Liao; Xiaopei Chen; Tingke Rao; Xiongfeng Wang; Guocheng Bao; Peng Yang*. Negative-bias-stress-induced current instability in quasi-2D tellurium field-effecttransistors, 2023 6th International Conference on Electronics Technology (ICET), Chengdu, China.

[7]. Jie Jiang, Peng Yang, Juin J. Liou, Wugang Liao*, Yang Chai*, Defect engineering of two-dimensional materials towards next-generation electronics and optoelectronics. Nano Research 2022, 16, 3104-3124.

[8]. Zhiyuan Shi^#, Xiujun Wang^#, Qingtian Li, Peng Yang, Guangyuan Lu, Ren Jiang, Huishan Wang, Chao Zhang, Chunxiao Cong, Zhi Liu, Tianru Wu*, Haomin Wang*, Qingkai Yu, Xiaoming Xie. Vapor–Liquid–Solid growth of large area multilayer hexagonal boron nitride on dielectric substrates. Nature communications 2020, 11, 849(1-8).

[9]. Jiajia Zha, Shuhui Shi, Apoorva Chaturvedi, Haoxin Huang, Peng Yang, Yao Yao, Siyuan Li, Yunpeng Xia, Zhuomin Zhang, Wei Wang, Huide Wang, Shaocong Wang, Zhen Yuan, Zhengbao Yang, Qiyuan He, Huiling Tai, Edwin Hang Tong Teo, Hongyu Yu, Johnny C Ho, Zhongrui Wang, Hua Zhang, Chaoliang Tan. Electronic/Optoelectronic Memory Device Enabled by Tellurium‐based 2D van der Waals Heterostructure for in‐Sensor Reservoir Computing at the Optical Communication Band. Advanced Materials 2023, 35, 22111598.

[10]. Guangyuan Lu^#, Tianru Wu^#, Peng Yang, Yingchao Yang, Zehua Jin, Weibing Chen, Shuai Jia, Haomin Wang, Guanhua Zhang, Julong Sun, Pulickel M Ajayan, Jun Lou*, Xiaoming Xie*, Mianheng Jiang. Synthesis of high-quality graphene and hexagonal boron nitride in-plain heterostrcucture on Cu-Ni alloy. Advanced Science 2017, 4, 1700076. (IF: 17.5)

专利

[1] p型碲硒合金半导体的制备方法(专利号：2023108314330)

[2] 基于衬底硫化预处理的单层二硫化钼的制备方法.(专利号: 201910705361.9)

[3] 一种低维碲晶体的制备方法(专利号：202210252141.7)

科研项目

二维碲烯的可控制备及其在互补晶体管中的应用研究丨30万丨主持，在研

高质量二维碲烯及其异质结构的制备与光电性能研究丨30万丨主持，在研

获奖荣誉

2020年复旦大学优秀毕业生

主讲课程

《集成电路制备工艺》、《大学化学》、《半导体物理与器件实验》。