教育及工作经历

2008， 工学博士 （中国科学院半导体研究所）

2008-2016：副总设计师，四川九洲电器集团有限责任公司

2017-2019：技术总监，中山市优理特光电技术有限公司

2021-2022：技术总监，江苏鸿利国泽光电科技有限公司  

2023-至今: 工程副教授，深圳技术大学

研究领域

半导体芯片封装，半导体光芯片与电芯片集成共封装，Micro-LED

代表性文章 

[1] The influence of polarization induced fields on luminescence of InGaN/GaN quantum well; Lunchun Guo, Xiaoliang Wang, Hongling Xiao et al. Journal of Crystal Growth, 298 (2007) 522-526

[2] The influence of 1 nm AlN interlayer on properties of the Al0.3Ga0.7N/AlN/GaN HEMT structure; L C Guo, X L Wang, H L Xiao, J X Ran, W J Luo et al. Microelectronics Journal, 39 (2008) 777-781.

[3] Properties of AlxGa1−xN/AlyGa1−yN/AlN/GaN Double-Barrier High Electron Mobility Transistor Structure; GUO Lun-Chun, WANG Xiao-Liang, XIAO Hong-Ling, WANG Zhan-Guo et al. CHIN. PHYS. LETT,, 26(2009) 017301.

[4] 插入δAl/AlN 缓冲层在Si衬底上生长GaN；郭伦春，王晓亮，胡国新，李建平等;半导体学报2007第28卷增刊110－113.

[5] White light emitting diode of a blue and yellow light emitting (structure) layer stacked structure and method for manufacturing the same; Xiaoliang Wang, Lunchun Guo, Junxi Wang, Jinmin Li; APPL NO.：11/184168

[6] The growth of high-Al-content InAlGaN quaternary alloys by RF-MBE, Bao-Zhu Wang, Xiao-Liang Wang, Xiao-Yan Wang, Lun-Chun Guo, Xin-Hua Wang, Hong-Ling Xiao, Hong-Xin Liu, Journal of Physics D:Applied Physics, 40 (3) (2007)765-768

[7] Growth and annealing study of Mg-doped AlGaN and GaN/AlGaN superlattices, WANG Bao-Zhu, WANG Xiao-Liang, HU Guo-Xin, RAN Jun-Xue, WANG Xin-Hua, GUO Lun-Chun, XIAO Hong-Ling, LI Jian-Ping, ZENG Yi-Ping, LI Jin-Min, WANG Zhan-Guo,Chinese Physics Letter, 23(8) (2006)2187.

[8] The influence of AlN/GaN superlattice intermediate layer on the properties of GaN grown on Si(111) substrates, Liu Zhe, Wang Xiao-Liang, Wang Jun-Xi, Hu Guo-Xin, Guo Lun-Chun, Li Jin-Min, Chinese Physics, 16 (5)(2007) 1467-1471.

[9] Effects of buffer layers on the stress and morphology of GaN epilayer grown on Si substrate by MOCVD, Zhe Liu, Xiaoliang Wang, Junxi Wang, Hu Guoxin Hu, Lunchun Guo, Jianping LI, Jinmin Li, Yiping Zeng, Journal of Crystal Growth, 298 (2007) 281-283

[10] Study on surface morphology of GaN growth by MOCVD on GaN/Si(111) template; Zhe Liu, Junxi. Wang, Xiaoliang Wang, Guoxin Hu, Lunchun Guo, Hongxin Liu, Jianping Li, Jinmin Li, Yiping Zeng; Journal of rare earths, 24 (2006) 11-13

专利

1. 蓝光、黄光量子阱堆叠结构白光发光二极管及制作方法，发明，专利号：ZL200410057150.2

2. 在硅衬底上生长的氮化镓薄膜结构及其生长方法，发明，专利号：ZL200810057890.4

3. 一种道路照明用白光发光二极管，发明，专利号：ZL200810216267.9

4. 一种大功率白光LED荧光粉涂敷方法，发明，专利号：ZL201110173524.7

5. 一种基于COB技术的LED显示屏封装工艺及LED显示屏，发明，专利号：ZL201210541191.3

6. 一种金属料带、LED支架、LED支架结构及LED灯，发明，专利号：ZL201410126081.X

7. 一种光纤阵列与硅光芯片共封装的光电基板及其制作方法,发明，申请号：2023112442562

获奖荣誉

深圳市高层次专业人才、深圳市光明区杰出人才、四川九洲电器集团科技标兵、四川九洲电器集团“百亿突出贡献奖”三等奖、2022年镇江市创新争先成绩突出科技人物。

主讲课程

《数字逻辑设计及应用》